发明名称 PHOTO SEMICONDUCTOR DEVICE
摘要 PURPOSE:To improve the maximum value of light output, by making the distribution of supply current densities close to one of light densities. CONSTITUTION:Anodes 41 and 42 are split-arranged in two on the same main surface so as to set the current density J2 of the radiation side independent of the current density J1 of the incidence side. In other words, the photon density S is low on the side of incidence, and the current consumed for the amplification is also small, and therefore the current density J1 supplied from the anode 41 on the side of incidence is set at a value relatively low. Contrarily, the photo density S is high on the side of radiation, and the current density consumed for the amplification is large, and the current density J2 supplied from the anode 42 on the side of radiation is set at a value relatively high. Thereby, the excess and short of supply currents liable to be caused by conventional light amplifiers can be reduced, and thus resulting in the elimination of the saturation of amplification effects, and light output can be increased.
申请公布号 JPS5850790(A) 申请公布日期 1983.03.25
申请号 JP19810148208 申请日期 1981.09.19
申请人 MITSUBISHI DENKI KK 发明人 TAKAMIYA SABUROU;HORIUCHI SHIGEKI;OOTAKI KANAME;YAMANAKA KENICHI
分类号 H01S5/00;H01S5/042;H01S5/0625;H01S5/50 主分类号 H01S5/00
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