| 摘要 |
PURPOSE:To form an even a-Si semiconductor layer on an elongated, tape- shaped supporting body by evaporating Si in the presence of active hydrogen and hydrogen ions obtainable through the discharge of a hydrogen gas. CONSTITUTION:A Si vaporizing source 3 is provided in a vacuum chamber 1, and an elongated, tape-shaped conductive supporting body 5 is made to be transferred along a supporting body passage situated above the source 3. A slit member 8 divides the supporting body into regions for evaporation. The supporting body 5, being heated with a heater 10, is transferred with a negative DC voltage applied to the body via a take-up reel 7, and at the same time active hydrogen and hydrogen ions are introduced into the chamber 1 with a hydrogen gas discharge tube 9, and Si is vaporized by heating the Si vaporizing source 3 to cause a-Si to be evaporated on the surface of the supporting body 5, forming an a-Si semiconductor layer. |
