| 摘要 |
PURPOSE:To quickly obtain ultra-minute pattern by employing the high resolution electron beam patterning system with low processing capability for miniature part of specified pattern and the ordinary exposure for the rough area. CONSTITUTION:The negative electron beam resist is coated to the material 8 to be processed on the semiconductor substrate 7. After the position alignment 10, the electron beam is irradiated 11 in accordance with a miniature minute pattern. Then, after mask alignment 10 of the window, the light including the wavelength of 180-300mm. is irradiated to the large pattern region. The pattern 9' is obtained by evelopment and the material 8 is etched using the mask 9'. Since the electron beam is irradiated only to the miniature pattern region, the scanning time is curtailed as compared with that for entire part and the ultra-miniature pattern which has not been obtained by the existing method can be formed. In case this method is applied to the positive resist, since the scanning area is narrow, the scanning time is not elongated and high speed patterning can be realized as in the case of negative resist, making high the degree of freedom of selecting resist material. |
