| 摘要 |
PURPOSE:To obtain a multi-wiring structure having smooth surface by laminating the insulating layer of non-additive acethylene and conductive layer of additive-acethylene. CONSTITUTION:The Ziegler-Natta catalyst is coated on the SiO2 film 2 of the Si substrate 1 and it is in contact with the acethylene gas under a low temperature, thereby the cis-type polyacethylene 11. After the Ziegler-Natta is removed by an organic solvent, the resist mask 14 is provided, the AsF5 ion is implanted and thereby a conductive layer 11C can be formed. The mask 14 is removed and the non-additive polyacethylene film 12 is stacked. Sequentially, the non-additive polyacethylene is stacked and then conductive layer is selectively formed. Thereby, the wiring layer having the electric conductivity same as that of the doped poly-Si can be obtained and its surface is always smooth, resulting in much contribution to improvement of reliability of IC. |
