| 摘要 |
PURPOSE:To realize ridid brazing with metal plate and obtain an insulated type semiconductor device with good thermal conductivity using inorganic insulated plate by sintering metal powder including Mo and W into the inorganic insulating material containing any one of the AlN or SiN groups as the main component under the reduction ambient and thereby providing a metallized layer. CONSTITUTION:The powder mixing Mo and W which well reacts with AlN or SiN plate 11 and rigidly adheres to them is mixed with the volatile organic medium and then printed, and such metal powder is kept at a temperature of 1,320 deg.C for 20min in the reduction gas ambient and then it is sintered, followed by non-electrolytic Ni plating 12. Thereafter, such element is kept at a temperature of 810 deg.C for about 5min under the H2 ambient. Succeedingly, the Cu plate 13, Si transistor pellet 14 are sequentially laminated and are bonded with the Pb-Sn system solder 15, the supporting plate 16 of Cu is bonded with the solder 17 of the same system, and finally these are sealed by the connecting lead L epoxy resin as specified. The insulated type semiconductor device according to this structure effectuates excellent heat radiation and insulation characteristics as well as excellent temperature proof cycle. |
