| 摘要 |
PURPOSE:To prepare a single crystal having a uniform quality and a few defects, by using a cylindrical crucible consisting of a cylinder part and a flat bottom part for fixing a disc seed crystal on the top, growing a single crystal of semiconductor by solute synthesis and diffusion method. CONSTITUTION:The cylinder part 1 is linked to the flat bottom part 2 having the level base 3 at the top by the screw 4, to form the crucible 10. The disc seed crystal 6 is fixed to the space between the part 5 of difference in a diameter of the cylinder part 1 and the base 3, the solvent metal 8 and the compound powder 9 of the first components are put on the seed crystal 6, and fed to the quartz container 16. The crucible 18 having the second component 17 is put in the quartz container 16 and the whole container 16 is put in the furnace 19. When the quartz container 16 is heated in the desired temperature distribution, the second component 17 in the form of vapor is fed to the solvent metal 8 of the first component, and the single crystal 7 of the compound is grown from the seed crystal 6. Consequently, stability to change in heat is improved and crystallizability is raised. |
