| 摘要 |
PURPOSE:To obtain mechanically and electrically stable device by bonding a semiconductor chip by a solder layer, which contains not less than 90wt% Pb, is comparatively soft and has approximately 60-100mum thickness, protruding solder from a side surface and sealing the device by a protective film through a resin layer. CONSTITUTION:Solder 12, which contains 95wt% Pb-5wt% Sn, thickness thereof is 400mum and area thereof is approximately half Si wafers 11, is disposed between the Si wafers with a P-N junction, a small number of spacers 13 of Ni particles with approximately 70mum grain size are arranged at the apex of an equilateral triangle, a laminate bonded by a solder layer 12a with few bubbles is manufactured through pressing and heating, and cut, and a laminated chip 20 is manufactured. Leads 21 are bonded by solder, which contains 85wt% Pb-15wt% Au, the chips 11a are etched by approximately 60mum by the mixed acid of HF-HNO3, strain due to processing is removed, and solder projections 23 are formed. The side surface is coated with polyimide resin 24, and coated with epoxy resin 25. Since the solder layers 12a are thick and comparatively soft at that time, the residual stress of the resin layer 25 to the chips 11a and the resin layer 24 is relaxed, electical characteristics are not degraded, and the yield of the cutting of the laminated chips is also improved. |
