| 摘要 |
PURPOSE:To uniformly realize a low resistance by converting the non-single crystalline Si by the irradiating the energy beam and activating it by implanting again the energy beam after implanting impurity ion exceeding the solid solution limit. CONSTITUTION:A non-additive high purity poly (amorphous)-silicon (Si) 3 is deposited by the vapor growth method on the SiO2 formed on the substrate 1. The layer 3 is single-crystallized through irradiation of Ar laser, and then the Ar ion is implanted by changing implanting energy. The element thereby obtained should have the characteristics that the peak concentration is laid for example in the depth of 800Angstrom , 1,600Angstrom , or 2,400Angstrom showing the Gaussian distribution and it is exceeding the solid solution limit L (As) of As ata any depth. Moreover, the P ion is implanted and thereby the same peak concentration should lie at the depths of 700Angstrom , 1,500Angstrom or 2,300Angstrom , wherein exceeding the solid solution limit L(P). When such element is annealed with an energy of 0.8J/cm<2> by irradiating the Q switch ruby laser, it is activated while impurity distribution does not change. Implantation of plurality of impurities of the same type alleviates crystal distortion and effective for improvement of operation of device. |
