| 摘要 |
PURPOSE:To provide a Schottky barrier gate field effect transistor which can be operated up to very high frequencies by making source inductance small. CONSTITUTION:An n<+> type semiconductor layer 8, which has high specific resistance layer, is embedded in a specified part in the surface of an n<+> type semiconductor substrate. An n type semiconductor layer 9 is formed on the entire surface. A drain electrod 11 is formed on the n type semiconductor layer 9 on the n type semiconductor layer 8. A gate electrode 10 is formed so as to surround the drain electrode 11. An ohmic electrode 12 is formed at the back surface of the substrate 7 so as to become a source electrode. A part 13 is a depletion layer beneath the gate. Since the source electrode 12 is located at the back surface of the n<+> type semiconductor substrate 7, the source electrode 12 can be directly connected to a package or a wiring substrate by solder without using bonding wire. |
