发明名称 |
Method of making a stacked emitter in a bipolar transistor by selective laser irradiation |
摘要 |
An insulating film is formed on a semiconductor substrate, and the insulating film on that part of the semiconductor substrate where an emitter is to be formed, is removed to expose the surface of the above part. A polycrystalline or amorphous silicon film is deposited on the entire surface, and then irradiated with a laser beam to convert that portion of the polycrystalline or amorphous silicon film which is deposited on the surface of the semiconductor substrate without interposing the insulating film therebetween, into a single crystal of silicon, thereby forming a stacked emitter.
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申请公布号 |
US4377421(A) |
申请公布日期 |
1983.03.22 |
申请号 |
US19800186743 |
申请日期 |
1980.09.12 |
申请人 |
HITACHI, LTD. |
发明人 |
WADA, YASUO;IKEDA, TAKAHIDE;TAMURA, MASAO |
分类号 |
H01L29/73;H01L21/02;H01L21/20;H01L21/268;H01L21/331;H01L29/04;H01L29/08;H01L29/72;(IPC1-7):H01L21/26 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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