发明名称 MASS PRODUCTION TYPE THIN FILM FORMING DEVICE
摘要 PURPOSE:To allow a reaction chamber small area and to prevent a dropping substance from the interior wall of the reaction chamber from adhering to substrates by a method wherein many first electrodes and second electrodes are vertically arranged at equal intervals and the substrates are supported by both the faces of the first electrodes concerning a mass production type thin film production device used for manufacturing an amorphous silicon sollar cell and simultaneously producing thin films on many substrates by a plasma CVD method. CONSTITUTION:Electrodes 21 containing heaters and facing electrodes 22 are alternately and vertically stood on the base 23 of a reaction chamber in parallel and are fixed to conductive sections 25. The electrodes 21 contain permanent magnets and substrates 26 consisting of ferrite family stainless steel are attracted to both the faces of the electrodes 21. In this case, the substrates 26 vertically stand. Therefore, a subproduct come off from the interior wall of the reation chamber does not adhere to the substrate faces. Floor area efficiency is good because the substrates 26 are mounted on both the faces of the vertical electrodes 21.
申请公布号 JPS5848416(A) 申请公布日期 1983.03.22
申请号 JP19810145713 申请日期 1981.09.16
申请人 FUJI DENKI SOUGOU KENKYUSHO:KK;FUJI DENKI SEIZO KK 发明人 HARUKI HIROSHI;FUJISAWA HIROBUMI;NISHIURA SHINJI;TAKEDA YUKIO
分类号 H01L31/04;C23C16/50;H01L21/205 主分类号 H01L31/04
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