发明名称 DRIVING CIRCUIT FOR TRANSISTOR
摘要 PURPOSE:To prevent destruction of switching elements, by switching an NPN transistor (TR) directly coupled between rectified power supplies through the turning on/off of a semiconductor switching element respectively connected to positive and negative power supply buses. CONSTITUTION:An AC power supply 1 is rectified at diodes 3-6 and an NPN TR10 is directly coupled between the power supplies. A positive or negative base current is supplied to the TR10 through the turning on/off of TRs 35, 38 connected between positive and negative power supply buses. Further, a non- linear element 12 is connected between the base and emitter of the TR10. Then, in case of a failure of a choke coil 8 such as short-circuit, only the TR10 is defected and the TRs 35, 38 of the driving circuit can be protected.
申请公布号 JPS5848526(A) 申请公布日期 1983.03.22
申请号 JP19810147593 申请日期 1981.09.17
申请人 MATSUSHITA DENKI SANGYO KK 发明人 SATOU TAKETOSHI;MIZUKAWA TAKUMI;OGINO YOSHIO;OOMORI HIDEKI
分类号 H02M7/537;H03K17/08 主分类号 H02M7/537
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