发明名称 MANUFACTURE OF GRID VAPOR-DEPOSITION FILM
摘要 PURPOSE:To obtain a clean surface with a constant secondary-electron emission ratio by placing a grid and a plate-like evaporation source parallel to one another with a given distance allowed between them, and subjecting the evaporation source to a sputtering evaporation by making ion beams to pass through the grid and bump against the evaporation source. CONSTITUTION:A cylindrical outer electrode 7 having a bottom is installed in a vacuum container 6, and earthed. A cylindrical inner electrode 8 having a bottom is installed inside the outer electrode 7, and connected to a high-frequency power source 9 situated outside the container 6. In addition, a plate-like evaporation source 12 made of platinum or the like is installed over a jig 10 approximately parallel to the jig 10, with a given distance allowed between the jig 10 and the source 12. By introducing argon gas or the like into the container 6, and applying a high-frequency electric power across the electrode 8 and the source 12, plasma discharge arises inside the electrode 8, and a plasma discharge part 14 is confined inside the electrode 8. As a result, argon ions form laminar flows with an excellent directivity, bump against the source 12 after passing through the network of a grid 2 placed over the jig 10, and make platinum to be subjected to a sputtering evaporation.
申请公布号 JPS5848333(A) 申请公布日期 1983.03.22
申请号 JP19810146288 申请日期 1981.09.18
申请人 TOKYO SHIBAURA DENKI KK 发明人 YOSHINO TSUNEICHI
分类号 H01J9/00;C23C14/24;H01J9/14 主分类号 H01J9/00
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