| 摘要 |
PURPOSE:To permit an insulator to bury in the recessed section of a substrate with a broader pattern by a method wherein a protective film is provided on the substrate and a difference in level of the substrate at the time of burying an insulating layer is widened by utilizing the protective film. CONSTITUTION:Drawing B shows that a reccessed section 10a is formed on a silicon semiconductor substrate 10 by dry etching. Drawing D shows that the removal of etching is done from the surface of a surface layer until a part of the surface layer is left in the recessed section by dry etching used oxygen as etching gas and Drawing E shows that the removal of etching is applied to an insulating film existing at the circumference section of said surface layer 15a by using the remaining surface layer 15a as a mask (for example, the removal of etching is done under the condition of etching gas CHF3, internal pressure of 0.05Torr, output of 900W). The remaining surface layer 15a and the protective layer 11 are removed by plasma etching by oxygen gas O2 and the burying of the insulating film 12 is completed. |
