发明名称 |
High density electrically programmable ROM |
摘要 |
An electrically programmable memory array of the floating gate type is made by a process which allows the edges of the floating gates to be aligned with the edges of the control gates which also form address lines. Contacts to individual cells are not needed. These factors provide a very small cell size. The source and drain regions are formed prior to applying the first level polysilicon then covered with thick oxide, rather than using the polysilicon as a mask to define the gate areas.
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申请公布号 |
US4377818(A) |
申请公布日期 |
1983.03.22 |
申请号 |
US19800220660 |
申请日期 |
1980.12.29 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
KUO, CHANG-KIANG;TSAUR, SHYH-CHANG |
分类号 |
G11C16/04;H01L21/8247;H01L27/105;H01L27/115;H01L29/788;(IPC1-7):H01L29/78;H01L27/02;H01L27/10;H01L29/04 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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