发明名称 METHOD FOR GROWTH OF FLAT-PLATE SHAPED SILICON SUBSTRATE
摘要 PURPOSE:To contrive the improvement of growth yield by a method wherein a cloth-shaped substrate knitted with a fibrous material getting wet with a silicon fused liquid is pulled up from the silicon fused liquid and a flat-plate shaped shaped silicon substrate with large area is easily and continuously grown without deteriorating crystal growth. CONSTITUTION:Three pieces of fibrous material getting wet with a silicon fused liquid 1, for example, a thin cloth-shaped substrate 5 knitted with carbon fiber, silicon carbide fiber, is provided between rollers 3, 4 and the tip section of the substrate 5 is pulled up and is fixed to a jig 6. With the substrate 5 pulled up from the silicon fused liquid 1, a flat-plate shaped silicon fused liquid 1 is formed on both the faces by surface tension for crystallization and a silicon substrate 7 is formed. In this method, temperature control for silicon fused liquid can relatively and easily be done and the improvement of growth yield can be achieved to continuously grow a silicon substrate with large diameter of crystalline grain and large area.
申请公布号 JPS5848418(A) 申请公布日期 1983.03.22
申请号 JP19810145814 申请日期 1981.09.16
申请人 TOKYO SHIBAURA DENKI KK 发明人 MAKI NAOAKI;SAWADA TOSHIYUKI;NAKAGAWA KOUJI
分类号 H01L31/04;H01L21/208 主分类号 H01L31/04
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