发明名称 |
Plasma-assisted etch process with endpoint detection |
摘要 |
Endpoint detection during plasma-assisted etching is signalled by cessation or onset of spatially confined luminescence resulting from an etch reaction product. Sensitivity of the system is aided by an optically focused detector which selectively detects such fluorescence as associated with one or a small number of lithographic features.
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申请公布号 |
US4377436(A) |
申请公布日期 |
1983.03.22 |
申请号 |
US19810318329 |
申请日期 |
1981.11.05 |
申请人 |
BELL TELEPHONE LABORATORIES, INCORPORATED |
发明人 |
DONNELLY, VINCENT M.;FLAMM, DANIEL L. |
分类号 |
G01N21/76;H01J37/32;(IPC1-7):H01L21/30;C23C15/00 |
主分类号 |
G01N21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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