| 摘要 |
PURPOSE:To obtain a good polycrystalline silicon film by a method wherein a crystal grain is grown by an ion implantation process and a reheating process at 500-1,050 deg.C after deposting polycrystalline silicon films at relatively low temperatures concerning a method of forming polycrystalline silicon film on a substrate such as single crystal silicon or glass by a thermal decomposition method. CONSTITUTION:SiH4(50%)-SiBr4(50%) gas is contacted with a substrate at 650 deg.C under Ar gas atmosphere. Furthermore, the substrate is again heated at 750 deg.C for 20min for thermal reduction and is taken out of a reaction furnace. After that, P ion implantation is done at 130keV, 10<12>cm<-2>. In this way, a high-quality polycrystalline silicon film having a few pin holes and low interfacial level density can be obtained. |
