| 摘要 |
PURPOSE:To enable to improve the degree of integration by a method wherein the area which will be turned to be useless due to bird beaks is substantially reduced as compared with the conventional one by providing an insulation layer isolation structure, the V or U groove of which is buried with an oxide substance and polycrystalline silicon. CONSTITUTION:A silicon epitaxially grown layer, a silicon dioxide film (SiO2 film) and a silicon nitride film (Si3N4 film) are formed on a silicon single crystal substrate, a selective etching is performed on these nitride and oxide films using a photoetching method, and a V or U groove reaching the single crystal substrate from the surface of the epitaxial layer is formed. After said V groove has been formed, a thin SiO2 film 11 (1,000Angstrom in thickness for example) is formed by performing thermal oxidization on the epitaxially grown layer 2 located on the exposed surface of the V groove and the single crystal substrate 1. At this time, the thickness of the silicon to be oxidized by heat is to be made approximately one half of that of the SiO2 film 11 (500Angstrom ), and almost no bird beak which will creep under the Si3N4 film 4 on the edge of the groove V is generated. |
