| 摘要 |
PURPOSE:To make the temperature control easy, by a method wherein tubular lamp with whole radiation ray varying at a moment in sequence are used as a heat source. CONSTITUTION:When a wafer 8 is inserted in a heating furnace and lamps 100 are lit, lamps 100a at ends and the center are lit by excessive input being greater than the rated value by about 20% and other lamps are lit at the rated input. Thereby temperature distribution of alpha-Si layer is formed in wavy distribution, and if the lamp 100a in excessive input is changed in sequence to lamps 100b, 100c to the right, the wave is moved in arrow direction. As the wave is moved, the epitaxial growth progresses partially from the right side gradually. The epitaxial growth is effected at a temperature near the melting point of silicon, and if the heating to 1,100-1,480 deg.C is performed concurrently in the whole region for a long time, the wafer may be melted or warped. In such method of the invention, the wafer is neither damaged nor warped. |
