发明名称 CLEANING METHOD FOR PLASMA PROCESSOR AND ITS PLASMA PROCESSOR
摘要 PURPOSE:To enable the plasma processor which cleans the inside of a plasma processing chamber without opening the inside to atmospheric air and can easily be automated by a method wherein an electrode is grounded while being opposed to the case of processing, an opposite electrode is insulated from the processing chamber and connected to a high-frequency power supply, the processing chamber is grounded, a cleaning gas is fed while being discharged, high-frequency voltage is applied to the opposite electrode and the processor is cleaned. CONSTITUTION:The gas for cleaning such as oxygen is supplied from a gas supply pipe 7 while evacuating the inside of the processing chamber 1A by means of a vacuum pump. When the electrode 2 placed is grounded by means of a changeover switch 18, the opposite electrode 4A is connected to the high-frequency power supply 5 and the power supply 5 is turned ON, plasma is generated not only between the opposite electrode 4A and the electrode 2 placed but also in the inner wall of a drum section 10 and between the back of the opposite electrode 4A and an upper cover 12, and the whole processing chamber can be cleaned by plasma. The whole surface of the inner wall of the drum section 10 can be cleaned by rotating a vertically movable handle 17 and vertically moving the section 4a of the opposite electrode 4A because strong plasma is generated between a section running parallel with the section 4a of the opposite electrode 4A of the drum section 10 and the opposite electrode 4A.
申请公布号 JPS5846639(A) 申请公布日期 1983.03.18
申请号 JP19810143859 申请日期 1981.09.14
申请人 HITACHI SEISAKUSHO KK 发明人 OOTSUBO TOORU
分类号 H01L21/302;H01J37/32;H01L21/3065;(IPC1-7):01L21/302 主分类号 H01L21/302
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