| 摘要 |
PURPOSE:To make the temperature control easy, by a method wherein tubular lamps with whole radiating ray varying at a moment in sequence are used as a heat source. CONSTITUTION:A wafer 8 is inserted in a heating furnace and lamps 100 in both planes are lit. After about 3-5sec, the wafer and alpha-Si layer are heated to 1,100-1,400 deg.C in nearly uniform distribution and held at the temperature. Only a lamp 100a at an end of the wafer in the plane S1 is lit by excessive input, and then a lamp at the right side is lit by excessive input in sequence. The alpha-Si layer attains temperature of 1,410-1,480 deg.C partially from the right side gradually. Epitaxial growth is effected at a temperature near the melting point of silicon, and if the heating to 1,410-1,480 deg.C is performed concurrently in the whole region for a long time, the wafer may be melted or warped. In such method of the invention, the wafer is neither damaged nor warped. |
