| 摘要 |
PURPOSE:To provide ease of temperature control by using as a heating source tubular lamps with all of the radiated light instantaneously variable. CONSTITUTION:A wafer 8 is inserted into a heating furnace, and when lamps 100 are lit, the alpha-Si layer on the wafer is heated to reach a substantially even temperature of 1,100-1,400 deg.C after 3-5sec. After maintaining this temperature only a lamp 100a at the end of the wafer is excessively lit and the entire region of the wafer is passed just under the lamp. Only that part of the alpha-Si layer which is just under the lamp 100a reaches 1,410-1,480 deg.C and makes the epitaxial growth. It is preferable that the epitaxial growth be made in the vicinity of the melting point of Si. Rising the temperature of the entire alpha-Si layer to 1,410- 1,480 deg.C simultaneously and keeping that temperature for an extended period of time the wafer may tend to melt to cause a warp on the wafer. This partial heating procedure, on the other hand, causes no wafer damage and warp, etc. |
