| 摘要 |
PURPOSE:To reduce the area of the substrate of the passive circuit section forming region of a matching circuit, etc., to miniaturize the area of an IC chip and to improve the degree of integration by increasing the dielectric constant of the substrate of the region. CONSTITUTION:10 and 11 are each a dielectric layer having a high dielectric constant and a metallic layer formed by removing one parts of the semi-insulating GaAs substrate 1 under the input matching circuit 6 and the output matching circuit 7. The input matching circuit 6 and the output matching circuit 7 are shaped onto BaTiO3 layers 10 having a high dielectric constant, and the BaTiO3 layers 10 can be regarded as the substrates of the sections by keeping foundation Cr.Au alloy layers 11 at grounding potential. The pattern form of both matching circuits 6, 7 forming a distribution constant circuit can be reduced because the dielectric constant epsilon of the substrate is the high value of approximately 37. The device can be formed in the size of approximately half the case when the circuits are shaped onto a conventional GaAs substrate. |
