| 摘要 |
PURPOSE:To improve the error of resistance value due to the scatter of resistance and the change of the width of a depletion layer largely, and to obtain the semiconductor resistor device having extremely high accuracy by connecting P type and N type semiconductor regions formed through the diffusion of P type and N type impurities in parallel as resistance elements. CONSTITUTION:The first (P type) and second (N type) semiconductor regions shaped by diffusing the P type (one conduction type) and N type (a reverse conduction type) impurities are connected in parallel as each resistance element forming a ladder resistance net. RP0-RPn and rp1-rpn-1 are the resistance elements formed by the P type semiconductor region, and RN0-RNn and rN1- rNn-1 are the resistance elements shaped by the N type semiconductor regions. According to such constitution, the change of the resistance value of each diffusion resistance of P type and N type due to the change of input signals IN (a1+2a2+...+2n<-1>an) is mutually denied, and the resistance value can be kept constant without regard to the level of the input signals IN. The scatter of the resistance value in a manufacturing process can be reduced because the P type and N type diffusion resistance are connected in parallel. |
