| 摘要 |
PURPOSE:To prevent the exfoliation of an inorganic insulating film directly coated onto a polyimide insulating film from a section on the polyimide insulating film when heat load is applied in the semiconductor device using polyimide as one part of the insulating film. CONSTITUTION:Dummy-through-holes 18a, 18b, 18c for degassing are formed to the inorganic layer insulating film 16, which consists of Si3N4 directly coated onto the polyimide layer insulating film 13 and has high density. A decomposed gas generated in the polyimide layer insulating film 13 further permeates through a cover insulating film 20 having low density and is discharged outside the device through the dummy-through-holes 18a, 18b, 18c by heat load applied to the semiconductor device. |
