| 摘要 |
PURPOSE:To obtain fine wiring by a method wherein an electrode lead-out wiring layer given metal silicide treatment is formed after introducing impurities into a semiconductor layer. CONSTITUTION:Onto a silicon substrate 21, a buried layer 22, an epitaxial growth layer 23, a field oxide layer 24, a silicon oxide film 25, semiconductor regions 26, 27, a polycrystalline silicon layer 28 and a silicon nitride film 29 are formed. The whole body is treated by thermal oxidation to form a thermal oxidation film 30 as shown in Fig. C and a semiconductor layer 31 at the same time. p type impurities are injected to form semiconductor regions 32, 33, which are used as an injector and external base of I<2>L respectively. As shown in Fig. D, the film 29 is etched and a platinum layer 34 is deposited on the surface including the surface of the layer 28. Next, as shown in Fig. E, the layer 34 is treated in N2 to form a platinum silicide 35 which is used as a lead-out wiring layer for a collector electrode. As shown in Fig. F, a silicon oxide film 36 is deposited and selective etching is performed to form a base contact hole 37 and injector contact hole 38. Then an Al layer is deposited and removed on the films 24, 25 by etching in order to form a base electrode lead-out wiring 39 and an injector electrode lead-out wiring 40, resulting in constitution of I<2>L circuit. |
