| 摘要 |
PURPOSE:To make the temperature control easy, by a method wherein tubular lamps with whole radiating ray varying at a moment in sequence are used as a heat source. CONSTITUTION:A wafer 8 is inserted in a heating furnace and lamps 100 in plane S2 are lit. After about 3-5sec, the wafer and alpha-Si layer are heated to 1,100-1,400 deg.C in nearly uniform distribution and held at the temperature. Only a lamp 100a at an end of the wafer in plane S1 is lit, and the wafer is moved so that the whole region passes through the lamp. The alpha-Si layer attains temperature of 1,410-1,480 deg.C at only a part just below the light and epitaxial growth is effected. The epitaxial growth progresses partially corresponding to the movement of wafer gradually, and finally is completed in the whole region. The epitaxial growth is effected at a temperature near the melting point of silicon, and if the heating to 1,410-1,480 deg.C is performed concurrently in the whole region for a long time, the wafer may be melted or warped. In such method of the invention, the wafer is neither damaged nor warped. |
