| 摘要 |
PURPOSE:To prevent the improper plating, further decrease in the characteristics of a semicnductor element and the lifetime thereof by increasing the length of a linear part of a rectangular metallic plate of the bottom of a hole of a semiconductor element container longer than the linear part of the hole. CONSTITUTION:The lengths of linear parts of a rectangular hole 51 of a ceramic package are represented by A1, B1, the linear parts corresponding to the metallic plate 52 on the bottom of the hole are designated by A2, B2, and are formed in the relation of A1<A2, B1<B2. At this time, the radii of the circular arcs of four corners of the metallic plate become sufficiently small, and when they are fixed to the metallized layer in the hole 51, a gap having a length longer than the prescribed length can be existed between the hole 51 and the metallic plate. Accordingly, when the Ni plating or Au plating continued to the exposed surface is performed after the fixture, plating solution can readily impregnate to the gap, thereby forming the plating laye of the prescribed thickness and effectively performing cleaning treatment, and no deterioration occurs in the quality of the plating layer by the hat at the time of fixing the element. Accordingly, the characteristics and the lifetime of the element can not be deteriorated. Mo, Fe-Ni or Fe-Ni-Co alloy is used for metallic plate. |
