发明名称 |
Method for producing semiconductor films |
摘要 |
A method for producing semiconducting films on a substrate wherein a plasma of a reactive gas is generated and an ion beam from the plasma is directed and accelerated toward a target of material of which the film is to be formed. The target which is maintained in a vacuum chamber at reduced pressure, is sputtered with the reactive ion beam and the material sputtered off the target is collected as a film on a substrate which is physically isolated from the plasma generating process and the sputtering process. Preferably the reactive gas is present in a mixture with an inert gas heavier than the reactive gas. |
申请公布号 |
US4376688(A) |
申请公布日期 |
1983.03.15 |
申请号 |
US19810254342 |
申请日期 |
1981.04.03 |
申请人 |
XEROX CORPORATION |
发明人 |
CEASAR, GERALD P.;GRIMSHAW, SCOTT F. |
分类号 |
C23C14/46;H01L21/203;(IPC1-7):C23C15/00 |
主分类号 |
C23C14/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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