| 摘要 |
PURPOSE:To extinguish a crystal defect formed to the surface by a scar by condensing laser beams having 1.5-15mum wavelength into a semiconductor and selectively shaping the scar. CONSTITUTION:The laser beams having the wavelength passing the semiconductor, such as Si, GaAs, InP, etc. are condensed into a sample 3 through a lens 2 having a short focus. Laser output I, the diameter a of the beams, the focal distance f, etc. are selected, the beams are condensed at a position in depth x in the semple 3, and the sink of the crystal defect is formed. Accordingly, since the sink is not annealed out during treatment at a high temperature and is positioned near an element forming surface (the surface), an impurity having a small diffusion constant is also gettered to the sink, and an excellent gettering effect is displayed for time longer than conventional methods. The method also has an advantage of which the surface of a substrate is also annealed by the laser beams. |
