| 摘要 |
PURPOSE:To prevent the dissociation of As from a GaAs substrate by introducing the GaAs substrate and an As compound, the pressure of equilibrium As thereof is higher than the substrate, into the same reactor and annealing the substrate and the compound. CONSTITUTION:A cover 2 is connected to the upper section of the reactor 1 and the reactor is formed in hermetically sealed shape, a sample base 3 is fitted into the reactor, and a thermocouple 4 is disposed to the lower surface of the sample base 3. A capillary tube 5 for sucking an inert gas is set up to one side surface of the reactor 1 and a capillary tube 5' for exhaust to an opposite side surface, a capillary tube 9 for adjusting the pressure of As is fitted on its midway of the capillary tube 5, and cocks 7-9 are mounted to each capillary tube. A resistance heating furnace 12 for heating the whole reactor 1 in an externally heating type is installed, and can be moved. According to said constitution, the GaAs substrates 13 to which an impurity is injected completely and the AsSi 14 as a reactant are placed onto the sample base 3, the inert gas is properly introduced, and the substrates and the AsSi are thermally treated. Consequently, danger in case of operation can be prevented because the dissociation of As from the substrates 13 is obviated and a large amount of As gas are not generated. |
