发明名称 |
Method and device for the partial galvanization of surfaces which are conducting or have been made conducting |
摘要 |
Method and device for the partial galvanization of a surface of a conductive material is disclosed. A flow-on channel and a flow-off channel are positioned at an angle relative to the surface at less than 45 DEG and arranged to direct the electrolyte solution at an angle onto the surface to be treated. The electrolyte is removed at an angle to the surface by the flow-off channel such that on the surface to be treated a substantially laminar flow arises. The flow-on channel and flow-off channel are constructed of a corrosion-resistant material. A metallic anode element is arranged in at least one of the flow-on and flow-off channels adjacent the area to be treated.
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申请公布号 |
US4376683(A) |
申请公布日期 |
1983.03.15 |
申请号 |
US19810249028 |
申请日期 |
1981.03.30 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
HELLWIG, HUBERTUS;SCHUSTER, HANS-JOACHIM;HEPPNER, KLAUS-DIETER |
分类号 |
C25D5/02;C25D5/08;H05K3/24;(IPC1-7):C25D5/02;C25D17/00 |
主分类号 |
C25D5/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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