High density dynamic memory cell

摘要

A dynamic read/write memory cell of the one transistor N-channel silicon gate type is made by a triple-level polysilicon process which allows the bit lines to be formed by metal strips which have low resistance and which can cover the storage capacitors for alpha particle protection. Metal-to-silicon contacts are made through an intervening polysilicon segment which allows the underlying N+ silicon region to be much smaller than in prior cells. The polysilicon segment also prevents the occurance of problems with spiking of metal through shallow implanted N+ regions.