| 摘要 |
PURPOSE:To obtain a semiconductor device having preferable moisture resistance by burying aluminum wirings in an SiO2 film, covering it with chemically stable metal film, and covering it with a protective film except a bonding pad. CONSTITUTION:An SiO2 film 15 is further superposed on an SiO2 film 13 opened with a window on an n<+> layer 12 of a p type Si substrate 11, and a hole 17 is opened at the film 15 via a resist mask 16. When Al, Mo are sequentially subsequently deposited, Al wirings 20, 20' covered with an Mo film 18 at the top surface are formed at the hole 17, and the wiring 20 is ohmically connected to the layer 12. After the resist 16 is removed, a PSG film 21 is covered. According to this structure, the Al wirings 20, 20' and the PSG 21 are not directly contacted, thereby preventing the Al wirings from corroding due to the water immersed through the PSG and remarkably improving the moisture resistance. |
