| 摘要 |
PURPOSE:To suppress the expansion of a diffused tube and to prevent the stepwise disconnection of a wiring layer by instantaneously heat treating with a light of the wavelength such as approx 10mum. CONSTITUTION:When a PSG is covered on an Si semiconductor device and a light of the wavelength such as approx. 10mum is emitted for approx. 10sec, Si-O bond of the SiO2 of the main content of a glass layer is absorbed, so that only the surface of the glass layer becomes higher than 100 deg.C, with the result that the glass can be fluidized, and since the light of the wavelength of approx. 10mum passes through the Si substrate, the temperature rise can be avoided, thereby eliminating the expansion of the diffused layer due to the heat. When the light is instantaneously emitted, it becomes further effective, and when the wirings are formed thereafter, no stepwise disconnection occurs at the wirings. |
