发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To increase the introduced light to optical fibers and to decrease crosstalk as well by a method wherein resins efficiently reflecting the light and passing no external light are interposed between the luminous planes and the optical fibers, and the resins and the lower ends of the optical fibers are covered with a white resin layer when many luminous planes of luminous elements and optical fibers are faced and arranged. CONSTITUTION:An n type GaAs1-xPx layer 12 gradually increased (x) from 0 to 0.3 to decrease distortion by the mismatching of lattice constant is epitaxially grown on an n type GaAs substrate 11 and a diffusion-preventing film 14 having a pluality of openings 15 is provided on the layer 12. Next, p type regions 16 are formed by diffusion in the openings 15 and Al layers 18 are formed throughout the film 14 from the circumference of the regions 16 and lens-shaped epoxy resin layers 21 having color of efficiently reflecting white color or emitted light and checking the passing of external light are provided on the openings of the regions 16 serving as luminous planes. After that, optical fibers 22 are abutted to the layers 21 and the lower ends of the optical fibers 22 and the layers 21 are molded with a white resin layer 23.
申请公布号 JPS5844778(A) 申请公布日期 1983.03.15
申请号 JP19810142771 申请日期 1981.09.10
申请人 TOKYO SHIBAURA DENKI KK 发明人 ABE HIROHISA
分类号 G02B5/00;G02B6/30;G02B6/42;H01L33/08;H01L33/16;H01L33/30;H01L33/40;H01L33/60;H01L33/62 主分类号 G02B5/00
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