| 摘要 |
PURPOSE:To obtain an LSI by wiring in a cell with metal having high hardness and corrosion resistance such as Pt, connecting through an insulating film to the prescribed part, forming an inspecting pad for soft and low corrosion unit cell such as aluminum, and selectively etching the sluminum after the inspection. CONSTITUTION:A resistor 11, a gate and an inverter element 12, 13 are formed on an Si substrate 10, holes 30, 31 are opened at an SiO2 20, thereby forming PtSi, and Ta thin film wirings are formed. The window 31 is for leading a ground terminal. An SiO2 21 is covered, a hole 32 is opened, thereby forming an Al test pad 15. Then, a probe is connected to the pad 15 and the substrate 10, thereby inspecting the respective cells X-Z. The pressure of the probe can be absorbed by the Al, thereby causing the insulating film and the wirings from not defecting. The pat 15 is selectively removed with hot phosphoric acid, the terminal redisposition wiring passage 16 of the Ta thin film is formed, and improper cell X is substituted and connected for a spare cell Z. Then, the SiO2 22 is covered, a hole 33 is opened, wirings between the cells can be formed on the substrate, thereby completing the LSI. |
