| 摘要 |
PURPOSE:To obtain the semiconductor device subject to no electrolytic corrosion without airtight sealing by a method wherein the conductive layer made of the material with ionization tendency at least equivalent to that of the material constituting the metallic current terminal is formed on the surface of current output side of a thermal buffer plate. CONSTITUTION:A first electrode layer 10 is evaporated or welded into the current output surface of a first thermal buffer plate 6 pressure welded on a heat dissipating plate 4 and a semiconductor thin piece 8 is integrated into said buffer plate 6 through the intermediary of said electrode 10. An Al electrode layer 11 is further evaporated into the current output surface of said thin piece 8 whereon a second thermal buffer plate 7 is to be pressure welded. The conductive layer 12 made of the material with ionization tendency equivalent to that of the material constituting a metallic current terminal 5 is formed on the current output surface of said buffer plate 7 to be pressure welded into said terminal 5. In the constitution mentioned so far, the electrolytic corrosion may be restrained because the metals with remarkable ionizing capacity are arranged on the anode side of the pressure welded surface of two different kind of metals. |
