| 摘要 |
In a solid-state imaging device having, in one major surface regions of a semiconductor substrate, photoelectric conversion elements which are disposed in a two-dimensional array, vertical switching metal-insulator-semiconductor field effect transistors and horizontal switching metal-insulator-semiconductor field effect transistors which select the photoelectric conversion elements, and vertical and horizontal scanning circuits which turn the switching transistors "on" and "off", a solid-state imaging device is characterized in that the vertical switching MIS-field effect transistors.
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