| 摘要 |
PURPOSE:To suppress the increase of contact resistances at the interface between an electrode and an active region among operation, by forming a barrier metallic layer into an electrode of a three layer structure on one conductive type active region on a compound semiconductor substrate. CONSTITUTION:Since a p type ohmic electrode 39 is formed in a three layer structure wherein a Ta layer pattern 37' is interposed between an AuZn film pattern 361' and an AuGe film pattern 38' deposited on a p type GaP layer 35, even when Ge in the AuGe film pattern 38' is going to diffuse into the AuZn film pattern 361' on a heat treatment, the Ta layer pattern 37' functions as a barrier which blocks the Ge diffusion and can prevent the increase of contact resistances of the interface between the AuZn film pattern 361' and the p type GaP layer 35, and accordingly an LED having the good ohmic electrode 39 is obtained. Since the diffusion of Ge in the AuGe film pattern 381' which forms the electrode 39 into the AuZn film pattern 361' is blocked when operating resulting in no increase of contact resistances of the interface between the AuZn film pattern 361' and the p type GaP layer 35, good electric characteristics are provided. |
