| 摘要 |
<p>PURPOSE:To obtain a semiconductor device having realized high integration density per unit area by stacking semiconductor substrates in three dimensions. CONSTITUTION:A partially thin region is formed by executing the silicon etching from the rear surface of a silicon substrate 14 in the area where a conductive path is formed and the diffusion is suppressed by making thinner the conductive path 12 of the diffusion layer. Bumps are formed in both ends of the conductive path passing therethrough, the chips of the silicon substrates 14 of the upper and lower layers are electrically connected, the condutive path passing through the depth direction is formed on a semiconductor substrate, and a bump 13 is formed thereon. Thereby, the semiconductor substrates can be connected mutually even when the N sheets of semiconductor substrates are stacked. Accordingly, the wiring length becomes short and the floating capacitance can be lowered, high speed operation can be realized. Test can be done in the stage of a chip and as a result, high quality can be maintained even when the N sheets of substrates are stacked.</p> |
