| 摘要 |
PURPOSE:To obtain a high performance and thermally stable semiconductor device by employing an alloy of at least the high melting point metal and low specific resistance metal as a first layer electrode wiring material, namely the lowest metal electrode wiring material and also using a material consisting of at least one component of said alloy as a second layer electrode wiring. CONSTITUTION:A platinum 304 and aluminium 305 are deposited on the surface of semiconductor substrate 301 including the poly crystalline semiconductor 303. Then, the platinum 304, aluminium 305 and poly crystalline semiconductor 303 are selectively etched. Thereafter, an electrode wiring layer consisting of platinum-aluminium-semiconductor alloy 306 is formed through the thermal processing at a temperature ranged in 300-600 deg.C executed to the semiconductor substrate including the platinum 304, aluminium 305 and poly crystalline semiconductor 303. Thereby, a semiconductor device providing the electrode wiring thus obtained shows a low specific resistance giving no restriction on the circuit structure, does not deteriorate any semiconductor element characteristics and moreover is thermally stable even for multi-layer structure. |
