发明名称 EXPOSURE TO LIGHT BY PHOTO MASK PATTERN PROJECTION
摘要 PURPOSE:To prevent decreased productivity due to the defect of pin hole by overlapping a pair of photo mask that are in mirror image relation so that both patterns will agree with each other and then transferring them to a body to be treated. CONSTITUTION:Because the position where a pin hole development is not always at a fixed place and the probability that pin holes overlap is very small, they are hidden by photo masks that are in mirror image relation, and a mask pattern that is transferred to a body to be treated is free of pin hole defect. In other words the pattern 3 on a reticule 1 and the pattern 3' on a reticule 2 are in mirror image relation, and this pair of reticules are overlapped with the mutual patterns matched. The light passes through the photo masks 5 and 5', and is made to converge by an optical lens 8 to form an image on a body 9 to be treated. Because the pin hole defects 7 developed on the photo mask patterns 6 and 6' are mutually shielded from the light by the dark portion patterns on the photo masks, the imagery formed on the body 9 is a pattern with the pin hole defect being corrected.
申请公布号 JPS5843513(A) 申请公布日期 1983.03.14
申请号 JP19810141164 申请日期 1981.09.08
申请人 NIPPON DENKI KK 发明人 KANAMARU TOYOMI
分类号 H01L21/30;G03F1/00;G03F1/54;G03F7/20;H01L21/027 主分类号 H01L21/30
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