| 摘要 |
PURPOSE:To obtain the GaAs IC with a small chip area and the wiring of high integration degree, by forming the dielectric layer with a dielectric constant higher than one of a GaAs substrate on a circuit pattern formed on the surface of the GaAs substrate and adhering this dielectric layer to a heat radiating member serving as the earth of a microwave IC substrate. CONSTITUTION:After the dielectric layer 10 of Ba, TiO3, etc. with a dielectric constant higher than that of a GaAs IC is formed on the GaAs IC shown in Fig. (a), a part of the dielectric layer 10 corresponding to an input terminal part 8 and an output terminal part 9 is etched off with a photo resist 12 as a mask, and a metallic layer 13 is formed on this part by a TiAu evaporation and Au plating as shown in Fig. (c). Next, as shown in Fig. (d), a metallic film 11 is formed on the dielectric layer 10 between two metallic layers 13 by lift-off method. The GaAs IC manufactured in such processes is mounted by a flip chip system on a package constituted of an Au plated base 14 and a ceramic substrate 15 whereon a circuit pattern for a microwave IC is provided. |
