SUPPORTING ELECTRODE PLATE FOR SEMICONDUCTOR ELEMENT

摘要

PURPOSE:To prevent the diffusion and/or elution of copper atoms and to contrive the improvement of processing and yield by a method wherein copper and invar are applied as the basic material of a supporting electrode plate and a barrier layer is provided on the whole surface of the supporting electrode plate. CONSTITUTION:In a complex plate 1 demarcating the basic form of a supporting electrode plate, a copper plate 3 or an invar plate 2 is coated on the both faces of the invar plate 2 or the copper plate 3. The complex plate 1 composed of the invar plate 2 and the copper plate 3 is provided with a barrier 4 on the whole surface of the complex plate including the end face. In this way, the diffusion and/or elution of copper atoms can be prevented by providing the barrier 4.