| 摘要 |
PURPOSE:To obtain a flat resin film with predetermined film thickness and having no upsurgence at a circumference section by a method wherein the circumference section of a film formation plane is formed as a minus tilt plane throughout a predetermined range and a resin film is formed. CONSTITUTION:A silicon wafer 3 with a diameter of 3 inches and formed a minus tilt angle of theta=0.4 deg. at the circumference section of a film formation plane is prepared. This silicon wafer 3 is washed by a normal means and is mounted on a spinner and polyimide resin of 3ml as heat resistant resin is dropped on the surface of the silicon wafer 3. A resin coated film is formed by rotating the spinner for 120sec after establishing spinner rotating speed of 2,000rpm. The resin coated film is left for one hour at 100 deg.C under nitrogen atmosphere and is further left for one hour by increasing temperature up to 200 deg.C and a resin film 4 with a thickness of about 21mum is formed by volatiling a solvent to harden the coated film. |
