发明名称 MANUFACTURE OF SEMICONDUCTOR LASER DEVICE
摘要 PURPOSE:To contrive improvement in reliability of adhesive property for the titled device by a method wherein a metal block, which will be turned to a heat radiating substance, and a laser element are adhered through the intermediary of an Si block whereon a metal layer having affinity for alloy solder material and a metal layer, having little surface rediation when it is alloyed, are coated on both sides. CONSTITUTION:The first metal layer 8 containing W, the second metal layer 9 consisting of gold, the third metal layer 10 of Ge, and the fourth metal layer 11 consisting of gold are formed in deposition on the front and back sides of an Si substrate 2. When Si submount 2 and a laser diode element 1 are successively placed on the metal block 3, which will be turned to a heat-resisting substrate with gold coating on the surface, and the above is maintained at the eutectic temperature of gold and Ge or above, said three metal layers are adhered each other by gold and Ge alloyed solder material 12, thereby enabling to obain the uniform adhesion having small thermal resistance.
申请公布号 JPS5842285(A) 申请公布日期 1983.03.11
申请号 JP19810140620 申请日期 1981.09.07
申请人 MITSUBISHI DENKI KK 发明人 KAKIMOTO SHIYOUICHI;SOGOU TOSHIO;TAKAMIYA SABUROU;NITSUTA SHIGEYUKI
分类号 H01L21/52;H01L23/373;H01S5/00 主分类号 H01L21/52
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