| 摘要 |
PURPOSE:To enable the growth of a large-sized single crystal of a compound semiconductor having controlled profile, in high reproducibility, by attaching a particular ring at the top of a crucible containing molten raw material for the preparation of single crystal by liquid capsule pulling method. CONSTITUTION:In the growth of a single crystal of a compound semiconductor having high decomposition pressure by the liquid capsule pulling method, a ring 33 is attached at the top of the quartz crucible 32 for containing molten raw material so as to cover the outer circumference of the crucible with the ring. The top face of the ring 33 is positioned below the upper end of the container 31 of the crucible 32. Since the heat dissipation from the inside of the crucible is effectively suppressed by this arrangement, the temperature of the molten liquid is maintained stably higher at the circumferential part than the central part, and at the same time, the content of the crucible is heat- insulated. Consequently, the temperature gradient in B2O3 covering the surface of the molten liquid is decreased, and the generation of crack and the increase of dislocation can be suppressed. As the temperature in the molten liquid takes a U-shaped distribution which is flat at the central part and has sharp positive gradient at the circumferential part, the diameter of the single crystal can be controlled in high stability and reproducibility. |
