| 摘要 |
PURPOSE:To obtain a surge protective device being in a small type and having a rapid response in a semiconductor integrated circuit device by a method wherein the opening parts for connection of a substrate are provided along the neighborhood of at least two sides of the region to be isolated, and wirings are connected to the opening parts thereof. CONSTITUTION:When a large negative surge voltage is inputted to an electrode 10, because the P-N-P junction formed between a resistor 3, the region 2 to be isolated therewith and the substrate 1 is made to ON to make a surge current to flow between the resistor 3 and electrodes 9 for connection of the substrate, no surge voltage appears on an electrode 11. Because impedance of the current path for surge current in space between from the resistor 3 to the electrodes 9 for connection of the substrate is reduced to make even a large surge current as allowable by provision of the opening parts 6 for connection of the substrate and the electrodes 9 for connection of the substrate, reduction much more of the shape of resistor element can be attained. Moreover even when a positive surge voltage is inputted, the surge current flows from the resistor 3 to the electrodes 9 for connection of the substrate, and the inside circuit is protected. |
